Infineon HEXFET Type N-Channel MOSFET, 106 A, 75 V Enhancement, 3-Pin TO-263 IRF3808STRLPBF

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Verpakkingsopties
RS-stocknr.:
915-4941
Fabrikantnummer:
IRF3808STRLPBF
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

106A

Maximum Drain Source Voltage Vds

75V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

7.5mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

200W

Typical Gate Charge Qg @ Vgs

150nC

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Width

11.3 mm

Height

4.83mm

Length

10.67mm

Standards/Approvals

No

Automotive Standard

No

N-Channel Power MOSFET 60V to 80V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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