SiC N-Channel MOSFET, 10 A, 1200 V, 3-Pin TO-247 Wolfspeed C2M0280120D

RS-stocknr.:: 915-8820
Fabrikantnummer:: C2M0280120D
Fabrikant:: Wolfspeed

SiC N-Channel MOSFET, 10 A, 1200 V, 3-Pin TO-247 Wolfspeed C2M0280120D

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RS-stocknr.:: 915-8820
Fabrikantnummer:: C2M0280120D
Fabrikant:: Wolfspeed

C2M0280120D Silicon Carbide Power MOSFET
ESD Control Selection Guide V1

Kenmerk	Waarde
Channel Type	N
Maximum Continuous Drain Current	10 A
Maximum Drain Source Voltage	1200 V
Package Type	TO-247
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	370 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	62.5 W
Transistor Configuration	Single
Maximum Gate Source Voltage	+25 V
Length	16.13mm
Number of Elements per Chip	1
Transistor Material	SiC
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	20.4 nC @ 20 V
Width	21.1mm
Minimum Operating Temperature	-55 °C
Height	5.21mm
Forward Diode Voltage	3.3V

SiC N-Channel MOSFET, 10 A, 1200 V, 3-Pin TO-247 Wolfspeed C2M0280120D

Wolfspeed Silicon Carbide Power MOSFETs