Wolfspeed C3M Type N-Channel MOSFET, 11.5 A, 900 V Enhancement, 3-Pin TO-247 C3M0280090D
- RS-stocknr.:
- 915-8842
- Fabrikantnummer:
- C3M0280090D
- Fabrikant:
- Wolfspeed
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 11,36
(excl. BTW)
€ 13,74
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 6 stuk(s) vanaf 05 januari 2026
- Plus verzending 28 stuk(s) vanaf 05 januari 2026
- Plus verzending 686 stuk(s) vanaf 12 januari 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 8 | € 5,68 | € 11,36 |
| 10 - 28 | € 5,33 | € 10,66 |
| 30 - 58 | € 5,18 | € 10,36 |
| 60 - 118 | € 5,06 | € 10,12 |
| 120 + | € 4,92 | € 9,84 |
*prijsindicatie
- RS-stocknr.:
- 915-8842
- Fabrikantnummer:
- C3M0280090D
- Fabrikant:
- Wolfspeed
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Wolfspeed | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 11.5A | |
| Maximum Drain Source Voltage Vds | 900V | |
| Series | C3M | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 360mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 9.5nC | |
| Forward Voltage Vf | 4.4V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 54W | |
| Maximum Gate Source Voltage Vgs | 18 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 5.21mm | |
| Length | 16.13mm | |
| Standards/Approvals | No | |
| Width | 21.1 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Wolfspeed | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 11.5A | ||
Maximum Drain Source Voltage Vds 900V | ||
Series C3M | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 360mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 9.5nC | ||
Forward Voltage Vf 4.4V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 54W | ||
Maximum Gate Source Voltage Vgs 18 V | ||
Maximum Operating Temperature 150°C | ||
Height 5.21mm | ||
Length 16.13mm | ||
Standards/Approvals No | ||
Width 21.1 mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation
MOSFET Transistors, Wolfspeed
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