IXYS Type N-Channel MOSFET, 46 A, 650 V Enhancement, 3-Pin TO-247 IXFH46N65X2

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€ 9,27

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RS-stocknr.:
917-1413
Artikelnummer Distrelec:
302-53-326
Fabrikantnummer:
IXFH46N65X2
Fabrikant:
IXYS
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Merk

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

46A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

69mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

98nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

660W

Forward Voltage Vf

1.4V

Maximum Operating Temperature

150°C

Height

5.21mm

Width

21.34 mm

Standards/Approvals

No

Length

16.13mm

Distrelec Product Id

30253326

Automotive Standard

No

N-channel Power MOSFET, IXYS HiPerFET™ X2 Series


The IXYS X2 class HiPerFET Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an enhanced high-speed intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.

Very low RDS(on) and QG (gate charge)

Fast intrinsic rectifier diode

Low intrinsic gate resistance

Low package inductance

Industry standard packages

MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

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