IXYS X2-Class N-Channel MOSFET, 8 A, 650 V, 3-Pin TO-220 IXTP8N65X2
- RS-stocknr.:
- 917-1479
- Fabrikantnummer:
- IXTP8N65X2
- Fabrikant:
- IXYS
Momenteel niet beschikbaar
We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 917-1479
- Fabrikantnummer:
- IXTP8N65X2
- Fabrikant:
- IXYS
Specificaties
Datasheets
Wetgeving en compliance
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | IXYS | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 8 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | TO-220 | |
| Series | X2-Class | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 500 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 150 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 12 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 15.9mm | |
| Length | 10.3mm | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 4.7mm | |
| Forward Diode Voltage | 1.4V | |
| Alles selecteren | ||
|---|---|---|
Merk IXYS | ||
Channel Type N | ||
Maximum Continuous Drain Current 8 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-220 | ||
Series X2-Class | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 500 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 150 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 12 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Width 15.9mm | ||
Length 10.3mm | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 4.7mm | ||
Forward Diode Voltage 1.4V | ||
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