Vishay IRFBG Type N-Channel MOSFET, 3.1 A, 1 kV Enhancement, 3-Pin TO-220
- RS-stocknr.:
- 919-4508
- Fabrikantnummer:
- IRFBG30PBF
- Fabrikant:
- Vishay
Afbeelding representeert productcategorie
Bulkkorting beschikbaar
Subtotaal (1 tube van 50 eenheden)*
€ 63,00
(excl. BTW)
€ 76,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 23 maart 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 50 - 50 | € 1,26 | € 63,00 |
| 100 - 200 | € 1,071 | € 53,55 |
| 250 + | € 1,008 | € 50,40 |
*prijsindicatie
- RS-stocknr.:
- 919-4508
- Fabrikantnummer:
- IRFBG30PBF
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3.1A | |
| Maximum Drain Source Voltage Vds | 1kV | |
| Series | IRFBG | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 125W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.8V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10.41mm | |
| Width | 4.7 mm | |
| Height | 9.01mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3.1A | ||
Maximum Drain Source Voltage Vds 1kV | ||
Series IRFBG | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 125W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.8V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10.41mm | ||
Width 4.7 mm | ||
Height 9.01mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
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