Vishay IRFBG30 Type N-Channel Power MOSFET, 3.1 A, 1 kV Enhancement, 3-Pin TO-220AB

RS-stocknr.:: 919-4508
Fabrikantnummer:: IRFBG30PBF
Fabrikant:: Vishay

Vishay IRFBG30 Type N-Channel Power MOSFET, 3.1 A, 1 kV Enhancement, 3-Pin TO-220AB

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Subtotaal (1 tube van 50 eenheden)*

€ 82,20

(excl. BTW)

€ 99,45

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

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Plus verzending 750 stuk(s) vanaf 25 juni 2026

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Aantal stuks	Per stuk	Per tube*
50 - 50	€ 1,644	€ 82,20
100 - 200	€ 1,398	€ 69,90
250 +	€ 1,315	€ 65,75

*prijsindicatie

RS-stocknr.:: 919-4508
Fabrikantnummer:: IRFBG30PBF
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	3.1A
	Maximum Drain Source Voltage Vds	1kV
	Series	IRFBG30
	Package Type	TO-220AB
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	5Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1.8V
	Typical Gate Charge Qg @ Vgs	80nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	125W
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Width	4.7mm
	Length	10.41mm
	Height	9.01mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 3.1A
	Maximum Drain Source Voltage Vds 1kV
	Series IRFBG30
	Package Type TO-220AB
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 5Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1.8V
	Typical Gate Charge Qg @ Vgs 80nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 125W
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Width 4.7mm
	Length 10.41mm
	Height 9.01mm
	Automotive Standard No

Land van herkomst:: CN

Vishay IRFBG30 Series Power MOSFET, 1000V Drain Source Voltage, 3.1A Continuous Drain Current - IRFBG30PBF

This power MOSFET is a high-voltage N-channel device intended for switching and power-control roles in industrial electronics. It is a through-hole component supplied in a TO-220AB package designed for applications requiring substantial power handling and high drain-to-source voltage capability.

Features and Benefits:

• 1000V drain-to-source rating enables high-voltage switching
• 3.1A continuous drain current supports moderate load currents
• 125W power dissipation allows elevated power handling
• 5Ω maximum Rds minimises conduction losses under load
• 80nC typical gate charge permits predictable gate-drive sizing
• 150°C maximum operating temperature sustains high-heat environments

Applications

• Suitable for high-voltage power converters in automation systems
• Ideal for motor drive front-ends in electrical equipment
• Used for industrial switching in control assemblies
• Can be used for protection circuits requiring high Vds
• Used with discrete power stages in mechanical actuation systems

What gate drive margin is permissible for safe operation?

The device can tolerate gate-source voltages up to 20V, so design gate drivers to operate within that range.

How does the package influence thermal management?

The TO-220AB through-hole package permits direct heatsinking to manage the 125W dissipation under appropriate mounting and cooling conditions.

What environmental temperature range can it withstand?

It operates reliably between -55°C and 150°C, accommodating wide industrial temperature extremes.

What pin configuration should designers expect?

The component is a three-pin through-hole device, compatible with standard PCB layouts for discrete power components.