Infineon HEXFET Type P-Channel MOSFET, 31 A, 55 V Enhancement, 3-Pin TO-220

RS-stocknr.:: 919-4924
Fabrikantnummer:: IRF5305PBF
Fabrikant:: Infineon

Infineon HEXFET Type P-Channel MOSFET, 31 A, 55 V Enhancement, 3-Pin TO-220

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Subtotaal (1 tube van 50 eenheden)*

€ 45,55

(excl. BTW)

€ 55,10

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Op voorraad

100 stuk(s) klaar voor verzending vanaf een andere locatie
Plus verzending 2.000 stuk(s) vanaf 25 februari 2027

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Aantal stuks	Per stuk	Per tube*
50 - 50	€ 0,911	€ 45,55
100 - 200	€ 0,71	€ 35,50
250 - 450	€ 0,665	€ 33,25
500 - 1200	€ 0,619	€ 30,95
1250 +	€ 0,574	€ 28,70

*prijsindicatie

RS-stocknr.:: 919-4924
Fabrikantnummer:: IRF5305PBF
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	31A
	Maximum Drain Source Voltage Vds	55V
	Package Type	TO-220
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	60mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	-1.3V
	Typical Gate Charge Qg @ Vgs	63nC
	Maximum Power Dissipation Pd	110W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Width	4.69mm
	Height	8.77mm
	Length	10.54mm
	Standards/Approvals	No
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 31A
	Maximum Drain Source Voltage Vds 55V
	Package Type TO-220
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 60mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf -1.3V
	Typical Gate Charge Qg @ Vgs 63nC
	Maximum Power Dissipation Pd 110W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Width 4.69mm
	Height 8.77mm
	Length 10.54mm
	Standards/Approvals No
	Automotive Standard No

Land van herkomst:: MX

Infineon HEXFET Series MOSFET, 31A Maximum Continuous Drain Current, 110W Maximum Power Dissipation - IRF5305PBF

This MOSFET is tailored for high-efficiency power applications, providing both flexibility and reliability. Its enhancement mode operation makes it suitable for various systems requiring controlled switching, particularly in industrial and automation environments.

Features & Benefits

• Continuous drain current capacity of 31A supports demanding applications

• Voltage rating of 55V facilitates dependable switching

• Low on-resistance of 60mΩ reduces power loss

• TO-220AB package design enhances thermal performance

• Gate-source voltage range of ±20V accommodates diverse applications

• Rapid switching optimisation boosts overall system efficiency

Applications

• Used in motor control systems for efficient operation

• Applicable in power supply circuits for stable performance

• Integrated into electronic devices requiring effective switching capabilities

• Suitable for deployment in renewable energy systems

What is the temperature range for operation?

It operates within -55°C to +175°C, making it apt for extreme conditions.

How does the package type affect performance?

The TO-220AB package provides low thermal resistance, improving cooling efficiency during operation.

Can it handle pulsed drain current applications?

Yes, it supports pulsed drain currents up to 110A, ensuring adequate performance for transient demands.

What type of transistor is this?

It is a P-channel Si MOSFET, optimised for high-efficiency applications.

Is it compatible with automated assembly processes?

Yes, the through-hole design allows for integration into automated systems and circuit boards.