DiodesZetex DMN Type N-Channel MOSFET, 43 A, 30 V Enhancement, 3-Pin TO-252 DMN3010LK3-13
- RS-stocknr.:
- 921-1076
- Fabrikantnummer:
- DMN3010LK3-13
- Fabrikant:
- DiodesZetex
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 20 eenheden)*
€ 10,18
(excl. BTW)
€ 12,32
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 25 januari 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 20 - 80 | € 0,509 | € 10,18 |
| 100 - 480 | € 0,33 | € 6,60 |
| 500 - 980 | € 0,294 | € 5,88 |
| 1000 - 2480 | € 0,262 | € 5,24 |
| 2500 + | € 0,256 | € 5,12 |
*prijsindicatie
- RS-stocknr.:
- 921-1076
- Fabrikantnummer:
- DMN3010LK3-13
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 43A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TO-252 | |
| Series | DMN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 11.5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.75V | |
| Typical Gate Charge Qg @ Vgs | 37nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.4W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.39mm | |
| Length | 6.2mm | |
| Width | 6.7 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 43A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TO-252 | ||
Series DMN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 11.5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.75V | ||
Typical Gate Charge Qg @ Vgs 37nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.4W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Height 2.39mm | ||
Length 6.2mm | ||
Width 6.7 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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