DiodesZetex ZXMP6A18K Type P-Channel MOSFET, 10.4 A, 60 V Enhancement, 3-Pin TO-252
- RS-stocknr.:
- 922-8204
- Fabrikantnummer:
- ZXMP6A18KTC
- Fabrikant:
- DiodesZetex
Subtotaal (1 rol van 2500 eenheden)*
€ 2.090,00
(excl. BTW)
€ 2.530,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 22 januari 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2500 + | € 0,836 | € 2.090,00 |
*prijsindicatie
- RS-stocknr.:
- 922-8204
- Fabrikantnummer:
- ZXMP6A18KTC
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10.4A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Series | ZXMP6A18K | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 10.1W | |
| Forward Voltage Vf | -0.95V | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.73mm | |
| Height | 2.39mm | |
| Width | 7.67mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q200, AEC-Q104, AEC-Q100, AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10.4A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Series ZXMP6A18K | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 10.1W | ||
Forward Voltage Vf -0.95V | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Maximum Operating Temperature 150°C | ||
Length 6.73mm | ||
Height 2.39mm | ||
Width 7.67mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q200, AEC-Q104, AEC-Q100, AEC-Q101 | ||
- Land van herkomst:
- CN
P-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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