OSI Optoelectronics Ultraviolet Photodiode, 65 °, Through Hole Ceramic package
- RS-stocknr.:
- 848-6294
- Fabrikantnummer:
- PIN-UV-100DQC
- Fabrikant:
- OSI Optoelectronics
Bulkkorting beschikbaar
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€ 195,52
(excl. BTW)
€ 236,58
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
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Aantal stuks | Per stuk |
|---|---|
| 1 - 4 | € 195,52 |
| 5 - 9 | € 192,20 |
| 10 + | € 189,85 |
*prijsindicatie
- RS-stocknr.:
- 848-6294
- Fabrikantnummer:
- PIN-UV-100DQC
- Fabrikant:
- OSI Optoelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | OSI Optoelectronics | |
| Product Type | Photodiode | |
| Spectrums Detected | Ultraviolet | |
| Wavelength of Peak Sensitivity | 980nm | |
| Package Type | Ceramic package | |
| Packaging | Tape & Reel | |
| Mount Type | Through Hole | |
| Number of Pins | 2 | |
| Minimum Wavelength Detected | 190nm | |
| Maximum Wavelength Detected | 1100nm | |
| Typical Fall Time | 0.6ns | |
| Amplified | No | |
| Minimum Operating Temperature | -25°C | |
| Maximum Operating Temperature | 85°C | |
| Height | 2.03mm | |
| Length | 16.51mm | |
| Standards/Approvals | RoHS | |
| Width | 14.99mm | |
| Angle of Half Sensitivity | 65 ° | |
| Dark Current | 0.2nA | |
| Typical Rise Time | 0.6ns | |
| Breakdown Voltage | 30V | |
| Polarity | Reverse | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk OSI Optoelectronics | ||
Product Type Photodiode | ||
Spectrums Detected Ultraviolet | ||
Wavelength of Peak Sensitivity 980nm | ||
Package Type Ceramic package | ||
Packaging Tape & Reel | ||
Mount Type Through Hole | ||
Number of Pins 2 | ||
Minimum Wavelength Detected 190nm | ||
Maximum Wavelength Detected 1100nm | ||
Typical Fall Time 0.6ns | ||
Amplified No | ||
Minimum Operating Temperature -25°C | ||
Maximum Operating Temperature 85°C | ||
Height 2.03mm | ||
Length 16.51mm | ||
Standards/Approvals RoHS | ||
Width 14.99mm | ||
Angle of Half Sensitivity 65 ° | ||
Dark Current 0.2nA | ||
Typical Rise Time 0.6ns | ||
Breakdown Voltage 30V | ||
Polarity Reverse | ||
Automotive Standard No | ||
- Land van herkomst:
- US
OSI UV Enhanced Series Photodiodes
The UV Enhanced series, from OSI Optoelectronics, are a range of UV enhanced silicon photodiodes. This series includes two seperate families of photodiodes, inversion channel and planar diffused. Both of these families are designed for low noise detection in the UV region of the electromagnetic spectrum.
The inversion layer structure family exhibit 100% internal quantum efficiency. Offering high shunt resistance, low noise and high breakdown voltages, this family of photodiodes are idea for low intensity light measurements.
Photodiodes with the planar diffused structure offer a lower capacitance and higher response time compared to the inversion later family. They also show linearity of photocurrent up to higher light input power compared to the inversion layer photodiodes.
Suitable applications for the UV Enhanced series includes; pollution monitoring, medical instrumentation, UV exposure meters, spectroscopy, water purification and fluorescence.
Features of the UV Enhanced series:
Inversion layers or planar diffused silicon photodiodes
Excellent UV response
Photodiodes, OSI Optoelectronics
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