ROHM High Side, High Side Power Switch IC 46-Pin, VQFN046V8080
- RS-stocknr.:
- 646-596P
- Fabrikantnummer:
- BM3G005MUV-LBE2
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal 10 eenheden (geleverd op een doorlopende strip)*
€ 124,85
(excl. BTW)
€ 151,07
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- Plus verzending 1.000 stuk(s) vanaf 12 oktober 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 10 + | € 12,485 |
*prijsindicatie
- RS-stocknr.:
- 646-596P
- Fabrikantnummer:
- BM3G005MUV-LBE2
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Product Type | Power Switch IC | |
| Power Switch Topology | High Side | |
| Power Switch Type | High Side | |
| Switch On Resistance RdsOn | 50mΩ | |
| Package Type | VQFN046V8080 | |
| Minimum Supply Voltage | 6.83V | |
| Pin Count | 46 | |
| Maximum Supply Voltage | 650V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 105°C | |
| Operating Current | 2.2mA | |
| Length | 8mm | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Width | 8mm | |
| Automotive Standard | No | |
| Series | BM3G005MUV-LB | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Product Type Power Switch IC | ||
Power Switch Topology High Side | ||
Power Switch Type High Side | ||
Switch On Resistance RdsOn 50mΩ | ||
Package Type VQFN046V8080 | ||
Minimum Supply Voltage 6.83V | ||
Pin Count 46 | ||
Maximum Supply Voltage 650V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 105°C | ||
Operating Current 2.2mA | ||
Length 8mm | ||
Height 1mm | ||
Standards/Approvals No | ||
Width 8mm | ||
Automotive Standard No | ||
Series BM3G005MUV-LB | ||
The ROHM GaN HEMT Power Stage is a high-performance product designed for the industrial equipment market, providing an optimal solution for electronics systems that require high power density and efficiency. By integrating the 650V enhancement GaN HEMT and silicon driver into ROHM’s original package, the product significantly reduces parasitic inductance caused by PCB and wire bonding, compared to traditional discrete solutions. This innovation enables a high switching slew rate of up to 150V/ns, making it the ideal choice for applications demanding fast switching and superior efficiency.
Low VDD Quiescent and Operating Current
Low Propagation Delay
High dv/dt Immunity
Adjustable Gate Drive Strength
Power Good Signal Output
VDD UVLO Protection
Thermal Shutdown Protection