Infineon High Side 2 Power Switch IC 14-Pin, PG-TDSO-14
- RS-stocknr.:
- 250-0572
- Fabrikantnummer:
- BTF60702ERVXUMA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 3000 eenheden)*
€ 5.364,00
(excl. BTW)
€ 6.489,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 26 maart 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 + | € 1,788 | € 5.364,00 |
*prijsindicatie
- RS-stocknr.:
- 250-0572
- Fabrikantnummer:
- BTF60702ERVXUMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Power Switch Topology | High Side | |
| Product Type | Power Switch IC | |
| Switch On Resistance RdsOn | 135mΩ | |
| Number of Inputs | 2 | |
| Mount Type | Surface | |
| Package Type | PG-TDSO-14 | |
| Pin Count | 14 | |
| Maximum Supply Voltage | 48V | |
| Operating Current | 3A | |
| Maximum Operating Temperature | 150°C | |
| Minimum Operating Temperature | -40°C | |
| Standards/Approvals | RoHS | |
| Height | 1.15mm | |
| Length | 8.65mm | |
| Series | BTF6070-2ERV | |
| Automotive Standard | AEC-Q11, AEC-Q100, AEC-Q2 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Power Switch Topology High Side | ||
Product Type Power Switch IC | ||
Switch On Resistance RdsOn 135mΩ | ||
Number of Inputs 2 | ||
Mount Type Surface | ||
Package Type PG-TDSO-14 | ||
Pin Count 14 | ||
Maximum Supply Voltage 48V | ||
Operating Current 3A | ||
Maximum Operating Temperature 150°C | ||
Minimum Operating Temperature -40°C | ||
Standards/Approvals RoHS | ||
Height 1.15mm | ||
Length 8.65mm | ||
Series BTF6070-2ERV | ||
Automotive Standard AEC-Q11, AEC-Q100, AEC-Q2 | ||
The Infineon makes this 60 mΩ dual channel smart High-Side power switch, embedded in a PG-TDSO-14, exposed pad package, providing protective functions and diagnosis. The power transistor is built by a N-channel vertical power MOSFET with charge pump. The device is integrated in Smart6 HV technology. It is specially designed to drive valve applications in the harsh automotive environment. For lighting applications the nominal bulb load of P10W+P5W 24 V or P10W 12 V is considered.
Fast demagnetization of inductive loads
Optimized Electromagnetic Compatibility (EMC)
Overload protection, current limitation, short circuit protection, thermal shutdown with restart
Reverse battery protection with external resistor and Electrostatic Discharge (ESD) protection
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