Infineon BTS3011TEATMA1 Low Side, Low Side Power Control Switch
- RS-stocknr.:
- 258-0728
- Fabrikantnummer:
- BTS3011TEATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 3,89
(excl. BTW)
€ 4,706
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 212 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 1,945 | € 3,89 |
| 20 - 48 | € 1,67 | € 3,34 |
| 50 - 98 | € 1,58 | € 3,16 |
| 100 - 198 | € 1,46 | € 2,92 |
| 200 + | € 1,34 | € 2,68 |
*prijsindicatie
- RS-stocknr.:
- 258-0728
- Fabrikantnummer:
- BTS3011TEATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Power Switch Type | Low Side | |
| Product Type | Power Control Switch | |
| Power Switch Topology | Low Side | |
| Switch On Resistance RdsOn | 0.022Ω | |
| Minimum Supply Voltage | -0.3V | |
| Maximum Supply Voltage | 28V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Operating Current | 10A | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q | |
| Series | BTS3011TE | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Power Switch Type Low Side | ||
Product Type Power Control Switch | ||
Power Switch Topology Low Side | ||
Switch On Resistance RdsOn 0.022Ω | ||
Minimum Supply Voltage -0.3V | ||
Maximum Supply Voltage 28V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Operating Current 10A | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q | ||
Series BTS3011TE | ||
The Infineon HITFET smart low-side power switch is a 11 mΩ single channel smart low-side power switch with in a PG-TO252-5 package providing embedded protective functions. The power transistor is built by an N-channel vertical power MOSFET. The device is monolithically integrated. The BTS3011TE is automotive qualified and is optimized for 12 V automotive and industrial applications.
Single channel device
Digital Feedback
Current limitation trigger concept
Electrostatic discharge protection
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