BGAP2D30AE6327XTSA1 Infineon Pre-Driver for Wireless Infrastructure Applications 35.2 dB, 16-Pin 4200 MHz TSNP-16
- RS-stocknr.:
- 349-417
- Fabrikantnummer:
- BGAP2D30AE6327XTSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 7,10
(excl. BTW)
€ 8,59
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 22 juni 2026
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 7,10 |
| 10 - 99 | € 6,39 |
| 100 - 499 | € 5,88 |
| 500 - 999 | € 5,46 |
| 1000 + | € 4,89 |
*prijsindicatie
- RS-stocknr.:
- 349-417
- Fabrikantnummer:
- BGAP2D30AE6327XTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | Pre-Driver for Wireless Infrastructure Applications | |
| Operating Frequency | 4200 MHz | |
| Technology | BiCMOS | |
| Gain | 35.2dB | |
| Minimum Supply Voltage | 4.75V | |
| Package Type | TSNP-16 | |
| Pin Count | 16 | |
| Maximum Supply Voltage | 5.5V | |
| Third Order Intercept OIP3 | 34.5dBm | |
| Minimum Operating Temperature | -40°C | |
| Noise Figure | 4.5dB | |
| Maximum Operating Temperature | 115°C | |
| Standards/Approvals | RoHS, JEDEC47/20/22 | |
| Height | 8mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type Pre-Driver for Wireless Infrastructure Applications | ||
Operating Frequency 4200 MHz | ||
Technology BiCMOS | ||
Gain 35.2dB | ||
Minimum Supply Voltage 4.75V | ||
Package Type TSNP-16 | ||
Pin Count 16 | ||
Maximum Supply Voltage 5.5V | ||
Third Order Intercept OIP3 34.5dBm | ||
Minimum Operating Temperature -40°C | ||
Noise Figure 4.5dB | ||
Maximum Operating Temperature 115°C | ||
Standards/Approvals RoHS, JEDEC47/20/22 | ||
Height 8mm | ||
Automotive Standard No | ||
- Land van herkomst:
- MY
The Infineon 3.3 to 4.2 GHz mid band driver amplifier that can be used as pre driver or driver in RF applications from massive MIMO 5G base stations to small cells and access points. The driver amplifier is typically placed between transceiver IC and power amplifier but can also be used as power amplifier for low power applications.
BiCMOS technology for an optimized performance
High gain and high power for fewer components in line up
Internal matching and saving external matching components
Easy design in and small area footprint
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