BGA5H1BN6E6327XTSA1 Infineon, RF Amplifier Low Noise, 18.1 dB 2690 MHz, 6-Pin TSNP-6-10
- RS-stocknr.:
- 258-0655
- Fabrikantnummer:
- BGA5H1BN6E6327XTSA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 12000 eenheden)*
€ 2.820,00
(excl. BTW)
€ 3.408,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 01 april 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 12000 + | € 0,235 | € 2.820,00 |
*prijsindicatie
- RS-stocknr.:
- 258-0655
- Fabrikantnummer:
- BGA5H1BN6E6327XTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Amplifier Type | Low Noise | |
| Typical Power Gain | 18.1 dB | |
| Typical Output Power | 60mW | |
| Typical Noise Figure | 1.2dB | |
| Maximum Operating Frequency | 2690 MHz | |
| Package Type | TSNP-6-10 | |
| Pin Count | 6 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Amplifier Type Low Noise | ||
Typical Power Gain 18.1 dB | ||
Typical Output Power 60mW | ||
Typical Noise Figure 1.2dB | ||
Maximum Operating Frequency 2690 MHz | ||
Package Type TSNP-6-10 | ||
Pin Count 6 | ||
The Infineon high gain low noise amplifier for LTE high band is LTE data rate can be significantly improved by using the Low Noise Amplifier. The integrated bypass function
increases the overall system dynamic range and leads to more flexibility in the RF front-end. In high gain mode the LNA offers best Noise Figure to ensure high data rates even on the LTE cell edge. Closer to the base station the bypass mode can be activated reducing current consumption.
increases the overall system dynamic range and leads to more flexibility in the RF front-end. In high gain mode the LNA offers best Noise Figure to ensure high data rates even on the LTE cell edge. Closer to the base station the bypass mode can be activated reducing current consumption.
Low current consumption of 8.5 mA
Multi-state control: Bypass- and high gain-Mode
Ultra small TSNP-6-10 leadless package
RF output internally matched to 50 Ohm
Low external component count
Multi-state control: Bypass- and high gain-Mode
Ultra small TSNP-6-10 leadless package
RF output internally matched to 50 Ohm
Low external component count
Gerelateerde Links
- BGA5H1BN6E6327XTSA1 Infineon 18.1 dB 2690 MHz, 6-Pin TSNP-6-10
- BGA7H1N6E6327XTSA1 Infineon 12.5 dB 2690 MHz, 6-Pin TSNP-6-2
- BGA524N6E6327XTSA1 Infineon 19.6 dB 1615 MHz, 6-Pin TSNP-6
- BGA855N6E6327XTSA1 Infineon 17.8 dB 1300 MHz, 6-Pin TSNP-6-10
- BGA123N6E6327XTSA1 Infineon 21.2 dB 1615 MHz, 6-Pin PG-TSNP-6
- BGA729N6E6327XTSA1 Infineon 16.3 dB 1000 MHz, 6-Pin TSNP-6-2
- BGA125N6E6327XTSA1 Infineon 22.2 dB 1300 MHz, 6-Pin PG-TSNP-6
- BGA7L1BN6E6327XTSA1 Infineon 13.6 dB 960 MHz, 6-Pin TSNP-6-2