BGA5H1BN6E6327XTSA1 Infineon RF Amplifier Low Noise 18.1 dB, 6-Pin 2690 MHz TSNP
- RS-stocknr.:
- 258-0656
- Fabrikantnummer:
- BGA5H1BN6E6327XTSA1
- Fabrikant:
- Infineon
Momenteel niet beschikbaar
We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 258-0656
- Fabrikantnummer:
- BGA5H1BN6E6327XTSA1
- Fabrikant:
- Infineon
Datasheets
Wetgeving en compliance
Productomschrijving
The Infineon high gain low noise amplifier for LTE high band is LTE data rate can be significantly improved by using the Low Noise Amplifier. The integrated bypass function
increases the overall system dynamic range and leads to more flexibility in the RF front-end. In high gain mode the LNA offers best Noise Figure to ensure high data rates even on the LTE cell edge. Closer to the base station the bypass mode can be activated reducing current consumption.
Low current consumption of 8.5 mA
Multi-state control: Bypass- and high gain-Mode
Ultra small TSNP-6-10 leadless package
RF output internally matched to 50 Ohm
Low external component count
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