onsemi 1200 V 38 A Diode 3-Pin TO-247-3LD NDSH30120CDN
- RS-stocknr.:
- 218-675
- Fabrikantnummer:
- NDSH30120CDN
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 1 eenheid)*
€ 9,67
(excl. BTW)
€ 11,70
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 900 stuk(s) vanaf 02 februari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Verpakking(en) | Per verpakking |
|---|---|
| 1 - 9 | € 9,67 |
| 10 - 99 | € 8,71 |
| 100 + | € 8,04 |
*prijsindicatie
- RS-stocknr.:
- 218-675
- Fabrikantnummer:
- NDSH30120CDN
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Mount Type | Through Hole | |
| Product Type | Diode | |
| Package Type | TO-247-3LD | |
| Maximum Continuous Forward Current If | 38A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Series | NDSH | |
| Diode Configuration | Dual Anode Common Cathode | |
| Pin Count | 3 | |
| Maximum Forward Voltage Vf | 1.75V | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 749A | |
| Peak Reverse Current Ir | 200μA | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Mount Type Through Hole | ||
Product Type Diode | ||
Package Type TO-247-3LD | ||
Maximum Continuous Forward Current If 38A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Series NDSH | ||
Diode Configuration Dual Anode Common Cathode | ||
Pin Count 3 | ||
Maximum Forward Voltage Vf 1.75V | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 749A | ||
Peak Reverse Current Ir 200μA | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
- Land van herkomst:
- CN
The ON Semiconductor Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higherreliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor.
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
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