onsemi 650 V 10 A Schottky Diode & Rectifier SiC Merged PIN Schottky 2-Pin TO-220-2 UJ3D06510TS
- RS-stocknr.:
- 648-519
- Fabrikantnummer:
- UJ3D06510TS
- Fabrikant:
- onsemi
Subtotaal (1 zak van 2 eenheden)*
€ 8,35
(excl. BTW)
€ 10,104
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 990 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per Zak* |
|---|---|---|
| 2 + | € 4,175 | € 8,35 |
*prijsindicatie
- RS-stocknr.:
- 648-519
- Fabrikantnummer:
- UJ3D06510TS
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | Schottky Diode & Rectifier | |
| Mount Type | Through Hole | |
| Package Type | TO-220-2 | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | UJ3 | |
| Diode Configuration | Single | |
| Rectifier Type | SiC Merged PIN Schottky | |
| Pin Count | 2 | |
| Peak Reverse Current Ir | 60μA | |
| Maximum Forward Voltage Vf | 2.1V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 70A | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.16mm | |
| Width | 4.19 mm | |
| Height | 15.37mm | |
| Standards/Approvals | RoHS, Pb-Free | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type Schottky Diode & Rectifier | ||
Mount Type Through Hole | ||
Package Type TO-220-2 | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series UJ3 | ||
Diode Configuration Single | ||
Rectifier Type SiC Merged PIN Schottky | ||
Pin Count 2 | ||
Peak Reverse Current Ir 60μA | ||
Maximum Forward Voltage Vf 2.1V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 70A | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 10.16mm | ||
Width 4.19 mm | ||
Height 15.37mm | ||
Standards/Approvals RoHS, Pb-Free | ||
Automotive Standard No | ||
- Land van herkomst:
- PH
The ON Semiconductor Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Easy paralleling
Extremely fast switching not dependent on temperature
No reverse or forward recovery
100% UIS tested
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