STMicroelectronics 650 V 10 A Schottky Diode SiC Schottky 2-Pin TO-220 STPSC10G065DY
- RS-stocknr.:
- 719-660
- Fabrikantnummer:
- STPSC10G065DY
- Fabrikant:
- STMicroelectronics
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€ 1,09
(excl. BTW)
€ 1,32
(incl. BTW)
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- Plus verzending 300 stuk(s) vanaf 26 maart 2026
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Aantal stuks | Per stuk |
|---|---|
| 1 + | € 1,09 |
*prijsindicatie
- RS-stocknr.:
- 719-660
- Fabrikantnummer:
- STPSC10G065DY
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | Schottky Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-220 | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Silicon Carbide Schottky Diode | |
| Series | STPSC | |
| Rectifier Type | SiC Schottky | |
| Pin Count | 2 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 650A | |
| Peak Reverse Current Ir | 425μA | |
| Maximum Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.75mm | |
| Width | 10.4 mm | |
| Height | 4.6mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type Schottky Diode | ||
Mount Type Through Hole | ||
Package Type TO-220 | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Silicon Carbide Schottky Diode | ||
Series STPSC | ||
Rectifier Type SiC Schottky | ||
Pin Count 2 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 650A | ||
Peak Reverse Current Ir 425μA | ||
Maximum Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 15.75mm | ||
Width 10.4 mm | ||
Height 4.6mm | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
The STMicroelectronics SiC diode is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature Based on latest technology optimization, this diode has an improved forward surge current capability, making it Ideal for use in PFC, where this ST SiC diode boosts the performance in hard switching conditions.
AEC-Q101 qualified and PPAP capable
None or negligible reverse recovery charge in application current range
Switching behaviour independent of temperature
High forward surge capability
ECOPACK2 compliant component
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