STMicroelectronics 650 V 4 A Schottky Diode SiC Schottky 2-Pin TO-220 STPSC4G065D

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RS-stocknr.:
719-664
Fabrikantnummer:
STPSC4G065D
Fabrikant:
STMicroelectronics
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Merk

STMicroelectronics

Product Type

Schottky Diode

Mount Type

Through Hole

Package Type

TO-220

Maximum Continuous Forward Current If

4A

Peak Reverse Repetitive Voltage Vrrm

650V

Diode Configuration

Silicon Carbide Schottky Diode

Series

STPSC

Rectifier Type

SiC Schottky

Pin Count

2

Peak Reverse Current Ir

170μA

Minimum Operating Temperature

-55°C

Maximum Forward Voltage Vf

1.3V

Peak Non-Repetitive Forward Surge Current Ifsm

385A

Maximum Operating Temperature

175°C

Length

15.75mm

Height

4.6mm

Land van herkomst:
CN
The STMicroelectronics SiC diode is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Thanks to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature.

None or negligible reverse recovery charge in application current range

Switching behaviour independent of temperature

High forward surge capability

ECOPACK2 compliant component

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