Infineon 1200 V 31.9 A Diode Schottky 3-Pin TO-220 IDH10G120C5XKSA1
- RS-stocknr.:
- 133-9915
- Fabrikantnummer:
- IDH10G120C5XKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 eenheid)*
€ 4,49
(excl. BTW)
€ 5,43
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- Plus verzending 325 stuk(s) vanaf 29 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 4,49 |
| 10 - 24 | € 4,27 |
| 25 - 49 | € 4,08 |
| 50 - 99 | € 3,90 |
| 100 + | € 3,64 |
*prijsindicatie
- RS-stocknr.:
- 133-9915
- Fabrikantnummer:
- IDH10G120C5XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-220 | |
| Maximum Continuous Forward Current If | 31.9A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Series | IDH10G120C5 | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 99A | |
| Maximum Forward Voltage Vf | 2.6V | |
| Peak Reverse Current Ir | 320μA | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.2mm | |
| Height | 15.95mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type Diode | ||
Mount Type Through Hole | ||
Package Type TO-220 | ||
Maximum Continuous Forward Current If 31.9A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Series IDH10G120C5 | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 99A | ||
Maximum Forward Voltage Vf 2.6V | ||
Peak Reverse Current Ir 320μA | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 10.2mm | ||
Height 15.95mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Land van herkomst:
- MY
thinQ! Silicon Carbide (SiC) Schottky Diode, Infineon
The Infineon thinQ!™ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.
Reduced EMI
Diodes and Rectifiers, Infineon
Gerelateerde Links
- Infineon 1200 V 31.9 A Diode Schottky 3-Pin TO-220
- Infineon 1200 V 56 A Diode Schottky 3-Pin TO-220
- Infineon 1200 V 11.8 A Diode Schottky 3-Pin TO-220
- Infineon 1200 V 22.8 A Diode Schottky 3-Pin TO-220
- Infineon 1200 V 22.8 A Diode Schottky 3-Pin TO-220 IDH08G120C5XKSA1
- Infineon 1200 V 56 A Diode Schottky 3-Pin TO-220 IDH20G120C5XKSA1
- Infineon 1200 V 11.8 A Diode Schottky 3-Pin TO-220 IDH02G120C5XKSA1
- Infineon 1200 V 5 A Diode PG-TO-220