STMicroelectronics 1200 V 10 A Diode Schottky 3-Pin D2PAK STPSC10H12GY-TR

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RS-stocknr.:
163-9785
Fabrikantnummer:
STPSC10H12GY-TR
Fabrikant:
STMicroelectronics
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Merk

STMicroelectronics

Product Type

Diode

Mount Type

Surface, Surface Mount

Package Type

TO-263

Maximum Continuous Forward Current If

10A

Peak Reverse Repetitive Voltage Vrrm

1200V

Diode Configuration

Single

Rectifier Type

Schottky

Pin Count

3

Peak Reverse Current Ir

400μA

Minimum Operating Temperature

-40°C

Peak Non-Repetitive Forward Surge Current Ifsm

420A

Maximum Forward Voltage Vf

2.25V

Maximum Operating Temperature

175°C

Height

4.6mm

Length

10.4mm

Width

9.35mm

Standards/Approvals

No

Automotive Standard

AEC-Q101, AEC-Q101

The SiC diode, available in TO-220AC and D²PAK, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature. Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases

No or negligible reverse recovery

Switching behavior independent of temperature

Robust high voltage periphery

PPAP capable

Operating Temp. from -40 °C to 175 °C

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