STMicroelectronics 1.2 kV 10 A Diode 2-Pin D2PAK STPSC10H12G2Y-TR
- RS-stocknr.:
- 219-4234
- Fabrikantnummer:
- STPSC10H12G2Y-TR
- Fabrikant:
- STMicroelectronics
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€ 11,76
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- Verzending vanaf 21 juni 2027
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Aantal stuks | Per stuk | Per verpakking* | Bespaar |
|---|---|---|---|
| 2 - 18 | € 5,88 | € 11,76 | - |
| 20 - 98 | € 5,69 | € 11,38 | € 3,80 |
| 100 - 198 | € 5,51 | € 11,02 | € 37,00 |
| 200 + | € 4,775 | € 9,55 | € 221,00 |
*prijsindicatie
- RS-stocknr.:
- 219-4234
- Fabrikantnummer:
- STPSC10H12G2Y-TR
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | Diode | |
| Mount Type | Surface | |
| Package Type | TO-263 | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 1.2kV | |
| Diode Configuration | Single | |
| Series | STPSC10H12G2Y-TR | |
| Pin Count | 2 | |
| Minimum Operating Temperature | -40°C | |
| Peak Reverse Current Ir | 30μA | |
| Maximum Forward Voltage Vf | 2.25V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 60A | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.95mm | |
| Height | 4.3mm | |
| Width | 10.4mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type Diode | ||
Mount Type Surface | ||
Package Type TO-263 | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 1.2kV | ||
Diode Configuration Single | ||
Series STPSC10H12G2Y-TR | ||
Pin Count 2 | ||
Minimum Operating Temperature -40°C | ||
Peak Reverse Current Ir 30μA | ||
Maximum Forward Voltage Vf 2.25V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 60A | ||
Maximum Operating Temperature 175°C | ||
Length 15.95mm | ||
Height 4.3mm | ||
Width 10.4mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The STMicroelectronics 10 A, 1200 V Sic diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature. Housed in D2PAK HV, this diode is perfectly suited for a usage in PFC applications, in OBC, DC/DC for EV, easing the compliance to IEC-60664-1. The STPSC10H12G2Y-TR will boost performances in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.
AEC-Q101 qualified
No or negligible reverse recovery
Switching behaviour independent of temperature
Robust high voltage periphery
PPAP capable
Operating Tj from -40 °C to 175 °C
Low VF
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