STMicroelectronics 650 V 8 A Diode Schottky 2-Pin TO-220 STPSC8065D

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Verpakkingsopties
RS-stocknr.:
164-6987
Fabrikantnummer:
STPSC8065D
Fabrikant:
STMicroelectronics
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Merk

STMicroelectronics

Product Type

Diode

Mount Type

Through Hole

Package Type

TO-220

Maximum Continuous Forward Current If

8A

Peak Reverse Repetitive Voltage Vrrm

650V

Diode Configuration

Single

Series

STPSC

Rectifier Type

Schottky

Pin Count

2

Peak Reverse Current Ir

750μA

Minimum Operating Temperature

-40°C

Maximum Forward Voltage Vf

1.65V

Peak Non-Repetitive Forward Surge Current Ifsm

200A

Maximum Operating Temperature

175°C

Diameter

3.75 mm

Length

10.4mm

Width

4.6 mm

Height

15.75mm

Standards/Approvals

No

Automotive Standard

No

The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases

No or negligible reverse recovery

Switching behavior independent of temperature

Dedicated to PFC applications

High forward surge capability

Operating Tj from -40 °C to 175 °C

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