Infineon 650V 3A, SiC Schottky Diode, 2-Pin TO-220 IDH03G65C5XKSA1

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RS-stocknr.:
168-8933
Fabrikantnummer:
IDH03G65C5XKSA1
Fabrikant:
Infineon
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Merk

Infineon

Mounting Type

Through Hole

Package Type

TO-220

Maximum Continuous Forward Current

3A

Peak Reverse Repetitive Voltage

650V

Diode Configuration

Single

Diode Type

SiC Schottky

Pin Count

2

Maximum Forward Voltage Drop

2.1V

Number of Elements per Chip

1

Diode Technology

SiC Schottky

Peak Non-Repetitive Forward Surge Current

31A

Land van herkomst:
CN

thinQ! Silicon Carbide (SiC) Schottky Diode, Infineon


The Infineon thinQ!™ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.

Reduced EMI


Diodes and Rectifiers, Infineon

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