onsemi 650 V 18 A Diode Schottky 3-Pin DPAK FFSD1065A
- RS-stocknr.:
- 178-4415
- Fabrikantnummer:
- FFSD1065A
- Fabrikant:
- onsemi
Subtotaal (1 verpakking van 5 eenheden)*
€ 6,11
(excl. BTW)
€ 7,395
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Laatste voorraad RS
- Laatste 4.990 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 + | € 1,222 | € 6,11 |
*prijsindicatie
- RS-stocknr.:
- 178-4415
- Fabrikantnummer:
- FFSD1065A
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Mount Type | Surface | |
| Product Type | Diode | |
| Package Type | TO-252 | |
| Maximum Continuous Forward Current If | 18A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Peak Reverse Current Ir | 600μA | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 760A | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 1.75V | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.73mm | |
| Width | 6.22 mm | |
| Height | 2.39mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Mount Type Surface | ||
Product Type Diode | ||
Package Type TO-252 | ||
Maximum Continuous Forward Current If 18A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Peak Reverse Current Ir 600μA | ||
Peak Non-Repetitive Forward Surge Current Ifsm 760A | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 1.75V | ||
Maximum Operating Temperature 175°C | ||
Length 6.73mm | ||
Width 6.22 mm | ||
Height 2.39mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 650 V, D1, DPAK
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 650 V, D1, DPAK
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Max Junction Temperature 175 °C
High Surge Current Capacity
Positive Temperature Coefficient
No Reverse Recovery / No Forward Recovery
Applications
PFC
Industrial Power
Solar
EV Charger
UPS
Welding
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