onsemi 650 V 11.6 A Schottky Diode Schottky 3-Pin DPAK FFSD0865B-F085
- RS-stocknr.:
- 195-8716
- Fabrikantnummer:
- FFSD0865B-F085
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 20 eenheden)*
€ 35,36
(excl. BTW)
€ 42,78
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 1.260 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 20 - 180 | € 1,768 | € 35,36 |
| 200 - 480 | € 1,524 | € 30,48 |
| 500 + | € 1,321 | € 26,42 |
*prijsindicatie
- RS-stocknr.:
- 195-8716
- Fabrikantnummer:
- FFSD0865B-F085
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Mount Type | Surface | |
| Product Type | Schottky Diode | |
| Package Type | TO-252 | |
| Maximum Continuous Forward Current If | 11.6A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | EliteSiC | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 42A | |
| Peak Reverse Current Ir | 160A | |
| Maximum Forward Voltage Vf | 2.4V | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.39mm | |
| Standards/Approvals | Pb-Free, RoHS | |
| Width | 6.22 mm | |
| Length | 6.73mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Mount Type Surface | ||
Product Type Schottky Diode | ||
Package Type TO-252 | ||
Maximum Continuous Forward Current If 11.6A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series EliteSiC | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 42A | ||
Peak Reverse Current Ir 160A | ||
Maximum Forward Voltage Vf 2.4V | ||
Maximum Operating Temperature 175°C | ||
Height 2.39mm | ||
Standards/Approvals Pb-Free, RoHS | ||
Width 6.22 mm | ||
Length 6.73mm | ||
Automotive Standard AEC-Q101 | ||
Silicon Carbide (SiC) Schottky Diode - EliteSiC, 8A, 650V, D2, DPAK Automotive Silicon Carbide (SiC) Schottky Diode, 650 V
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost
Max Junction Temperature 175 °C
PPAP capable
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery / No Forward Recovery
Applications
Automotive HEV-EV Onboard Chargers
Automotive HEV-EV DC-DC Converters
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