onsemi 650 V 60 A Diode Schottky 2-Pin TO-247 FFSH5065A
- RS-stocknr.:
- 178-4427
- Fabrikantnummer:
- FFSH5065A
- Fabrikant:
- onsemi
Informatie over voorraden is momenteel niet toegankelijk
Alternatief
Dit product is momenteel niet beschikbaar. Hierbij onze aanbeveling voor een alternatief product.
Elk (in eentube van 30)
€ 257,34
(excl. BTW)
€ 311,38
(incl. BTW)
- RS-stocknr.:
- 178-4427
- Fabrikantnummer:
- FFSH5065A
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 60A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Peak Reverse Current Ir | 600μA | |
| Maximum Forward Voltage Vf | 1.75V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 1.4kA | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.87mm | |
| Height | 20.82mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type Diode | ||
Mount Type Through Hole | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 60A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Peak Reverse Current Ir 600μA | ||
Maximum Forward Voltage Vf 1.75V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 1.4kA | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 15.87mm | ||
Height 20.82mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 50 A, 650 V, D1, TO-247-2L Silicon Carbide (SiC) Schottky Diode – EliteSiC, 50 A, 650 V, D1, TO-247-2L
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Max Junction Temperature 175 °C
High Surge Current Capacity
Positive Temperature Coefficient
No Reverse Recovery / No Forward Recovery
Applications
PFC
Industrial Power
Solar
EV Charger
UPS
Welding
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