onsemi 650 V 10 A Diode Schottky 2-Pin TO-247
- RS-stocknr.:
- 189-0178
- Fabrikantnummer:
- FFSH1065B-F085
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 tube van 30 eenheden)*
€ 113,04
(excl. BTW)
€ 136,77
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 300 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 30 - 90 | € 3,768 | € 113,04 |
| 120 - 240 | € 3,667 | € 110,01 |
| 270 - 480 | € 3,569 | € 107,07 |
| 510 - 990 | € 3,478 | € 104,34 |
| 1020 + | € 3,392 | € 101,76 |
*prijsindicatie
- RS-stocknr.:
- 189-0178
- Fabrikantnummer:
- FFSH1065B-F085
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 600A | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 2.4V | |
| Peak Reverse Current Ir | 160μA | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 2.82mm | |
| Length | 15.87mm | |
| Width | 4.82 mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type Diode | ||
Mount Type Through Hole | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 600A | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 2.4V | ||
Peak Reverse Current Ir 160μA | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 2.82mm | ||
Length 15.87mm | ||
Width 4.82 mm | ||
Automotive Standard AEC-Q101 | ||
Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10A, 650V, D2, TO-247-2L
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost
Max Junction Temperature 175 °C
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery / No Forward Recovery
Applications
Automotive HEV-EV Onboard Chargers
Automotive HEV-EV DC-DC Converters
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