onsemi 650 V 30 A Diode Schottky 2-Pin TO-220 FFSP3065B
- RS-stocknr.:
- 194-5757
- Fabrikantnummer:
- FFSP3065B
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 6,29
(excl. BTW)
€ 7,61
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 6,29 |
| 10 + | € 5,42 |
*prijsindicatie
- RS-stocknr.:
- 194-5757
- Fabrikantnummer:
- FFSP3065B
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-220 | |
| Maximum Continuous Forward Current If | 30A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 1.1kA | |
| Peak Reverse Current Ir | 160μA | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 2.4V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Width | 2.92 mm | |
| Standards/Approvals | RoHS | |
| Height | 16.51mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type Diode | ||
Mount Type Through Hole | ||
Package Type TO-220 | ||
Maximum Continuous Forward Current If 30A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 1.1kA | ||
Peak Reverse Current Ir 160μA | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 2.4V | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Width 2.92 mm | ||
Standards/Approvals RoHS | ||
Height 16.51mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
Silicon Carbide Schottky Diode 650V 30A TO220 Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 650 V, D2, TO-220-2L
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Max Junction Temperature
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery/No Forward Recovery
Pb-Free, Halogen Free/BFR Free
175 C
144 mJ
Applications
General Purpose
SMPS
Solar Inverter
UPS
Power Switching Circuit
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