STMicroelectronics 1200 V 20 A Diode Schottky 3-Pin TO-247 LL STPSC40H12CWL
- RS-stocknr.:
- 201-0870
- Fabrikantnummer:
- STPSC40H12CWL
- Fabrikant:
- STMicroelectronics
Momenteel niet beschikbaar
We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 201-0870
- Fabrikantnummer:
- STPSC40H12CWL
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-247 LL | |
| Maximum Continuous Forward Current If | 20A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Series | STPSC40H12C | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Peak Reverse Current Ir | 60μA | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 700A | |
| Minimum Operating Temperature | -40°C | |
| Maximum Forward Voltage Vf | 2.25V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Diameter | 3.55mm | |
| Width | 15.77mm | |
| Height | 4.9mm | |
| Length | 40.87mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type Diode | ||
Mount Type Through Hole | ||
Package Type TO-247 LL | ||
Maximum Continuous Forward Current If 20A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Series STPSC40H12C | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Peak Reverse Current Ir 60μA | ||
Peak Non-Repetitive Forward Surge Current Ifsm 700A | ||
Minimum Operating Temperature -40°C | ||
Maximum Forward Voltage Vf 2.25V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Diameter 3.55mm | ||
Width 15.77mm | ||
Height 4.9mm | ||
Length 40.87mm | ||
Automotive Standard No | ||
The STMicroelectronics 1200V power schottky silicon carbide diode is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. This rectifier will enhance the performance of the targeted application. Its high forward surge capability.
No or negligible reverse recovery
Switching behaviour independent of temperature
Robust high voltage periphery
Operating Tj from -40 °C to 175 °C
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