STMicroelectronics 650 V 4 A Diode 2-Pin D2PAK STPSC4H065B-TR
- RS-stocknr.:
- 201-0882P
- Fabrikantnummer:
- STPSC4H065B-TR
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
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€ 105,60
(excl. BTW)
€ 127,80
(incl. BTW)
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- Verzending vanaf 28 december 2026
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Aantal stuks | Per stuk |
|---|---|
| 100 - 490 | € 1,056 |
| 500 - 990 | € 0,966 |
| 1000 - 2490 | € 0,954 |
| 2500 + | € 0,943 |
*prijsindicatie
- RS-stocknr.:
- 201-0882P
- Fabrikantnummer:
- STPSC4H065B-TR
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Mount Type | Surface | |
| Product Type | Diode | |
| Package Type | TO-263 | |
| Maximum Continuous Forward Current If | 4A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | STPSC | |
| Diode Configuration | Single | |
| Pin Count | 2 | |
| Peak Reverse Current Ir | 35μA | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 200A | |
| Minimum Operating Temperature | -40°C | |
| Maximum Forward Voltage Vf | 2.25V | |
| Maximum Operating Temperature | 175°C | |
| Length | 28.25mm | |
| Standards/Approvals | No | |
| Height | 4.5mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Mount Type Surface | ||
Product Type Diode | ||
Package Type TO-263 | ||
Maximum Continuous Forward Current If 4A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series STPSC | ||
Diode Configuration Single | ||
Pin Count 2 | ||
Peak Reverse Current Ir 35μA | ||
Peak Non-Repetitive Forward Surge Current Ifsm 200A | ||
Minimum Operating Temperature -40°C | ||
Maximum Forward Voltage Vf 2.25V | ||
Maximum Operating Temperature 175°C | ||
Length 28.25mm | ||
Standards/Approvals No | ||
Height 4.5mm | ||
Automotive Standard No | ||
The STMicroelectronics 650V high surge silicon carbide power schottky diode has a current rating of 4A. It is an ultra high performance power schottky diode. It is manufactured using a silicon carbide substrate. Its high forward surge capability ensures good robustness during transient phases. This SiC diode will boost the performance in hard switching condition.
No reverse recovery charge in application current range
Switching behavior independent of temperature
High forward surge capability
Power efficient product