Vishay 650 V 10 A Diode Schottky 3-Pin TO-220AC 2L VS-C10ET07T-M3
- RS-stocknr.:
- 209-8115
- Fabrikantnummer:
- VS-C10ET07T-M3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 21,20
(excl. BTW)
€ 25,65
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Wordt opgeheven
- Laatste 925 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 20 | € 4,24 | € 21,20 |
| 25 - 45 | € 3,602 | € 18,01 |
| 50 - 120 | € 3,434 | € 17,17 |
| 125 - 245 | € 3,18 | € 15,90 |
| 250 + | € 2,926 | € 14,63 |
*prijsindicatie
- RS-stocknr.:
- 209-8115
- Fabrikantnummer:
- VS-C10ET07T-M3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-220AC 2L | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | VSX | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Maximum Forward Voltage Vf | 1.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type Diode | ||
Mount Type Through Hole | ||
Package Type TO-220AC 2L | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series VSX | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Maximum Forward Voltage Vf 1.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay 650 V Power SiC Merged PIN Schottky Diode with forward Current of 10A.
Majority carrier diode using Schottky technology on SiC wide band gap material
Positive VF temperature coefficient for easy paralleling
Virtually no recovery tail and no switching losses
Temperature invariant switching behaviour
175 °C maximum operating junction temperature
MPS structure for high ruggedness to forward current surge events
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