STMicroelectronics 1200 V 20 A Diode 3-Pin D2PAK
- RS-stocknr.:
- 228-3058P
- Fabrikantnummer:
- STPSC20H12G2-TR
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal 10 eenheden (geleverd op een doorlopende strip)*
€ 85,55
(excl. BTW)
€ 103,52
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
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- Verzending vanaf 12 oktober 2026
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Aantal stuks | Per stuk |
|---|---|
| 10 - 18 | € 8,555 |
| 20 - 48 | € 7,705 |
| 50 + | € 7,66 |
*prijsindicatie
- RS-stocknr.:
- 228-3058P
- Fabrikantnummer:
- STPSC20H12G2-TR
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Mount Type | Surface | |
| Product Type | Diode | |
| Package Type | TO-263 | |
| Maximum Continuous Forward Current If | 20A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Diode Configuration | Single | |
| Pin Count | 3 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 120A | |
| Peak Reverse Current Ir | 60μA | |
| Maximum Forward Voltage Vf | 2.25V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.95mm | |
| Width | 10.58 mm | |
| Standards/Approvals | RoHS | |
| Height | 4.3mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Mount Type Surface | ||
Product Type Diode | ||
Package Type TO-263 | ||
Maximum Continuous Forward Current If 20A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Diode Configuration Single | ||
Pin Count 3 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 120A | ||
Peak Reverse Current Ir 60μA | ||
Maximum Forward Voltage Vf 2.25V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Length 15.95mm | ||
Width 10.58 mm | ||
Standards/Approvals RoHS | ||
Height 4.3mm | ||
Automotive Standard No | ||
The STMicroelectronics 20 A, 1200 V SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature.
No or negligible reverse recovery
Switching behaviour independent of temperature
Robust high voltage periphery
Operating Tj from -40 °C to 175 °C