STMicroelectronics 650 V 12 A Diode 3-Pin D2PAK STPSC12065G2-TR
- RS-stocknr.:
- 229-2098
- Fabrikantnummer:
- STPSC12065G2-TR
- Fabrikant:
- STMicroelectronics
Momenteel niet beschikbaar
We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 229-2098
- Fabrikantnummer:
- STPSC12065G2-TR
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Mount Type | Through Hole | |
| Product Type | Diode | |
| Package Type | TO-263 | |
| Maximum Continuous Forward Current If | 12A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Series | STPSC12065 | |
| Pin Count | 3 | |
| Peak Reverse Current Ir | 50μA | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 220A | |
| Minimum Operating Temperature | -40°C | |
| Maximum Forward Voltage Vf | 1.65V | |
| Maximum Operating Temperature | 175°C | |
| Length | 28.25mm | |
| Height | 4.4mm | |
| Width | 10 mm | |
| Standards/Approvals | No | |
| Diameter | 3.75 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Mount Type Through Hole | ||
Product Type Diode | ||
Package Type TO-263 | ||
Maximum Continuous Forward Current If 12A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Series STPSC12065 | ||
Pin Count 3 | ||
Peak Reverse Current Ir 50μA | ||
Peak Non-Repetitive Forward Surge Current Ifsm 220A | ||
Minimum Operating Temperature -40°C | ||
Maximum Forward Voltage Vf 1.65V | ||
Maximum Operating Temperature 175°C | ||
Length 28.25mm | ||
Height 4.4mm | ||
Width 10 mm | ||
Standards/Approvals No | ||
Diameter 3.75 mm | ||
Automotive Standard No | ||
The STMicroelectronics STPSC12065 is the SiC diode is an ultra high performance power schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a schottky diode structure with a 650 V rating.
No or negligible reverse recovery
Switching behaviour independent of temperature
Dedicated to PFC applications
High forward surge capability
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