Infineon 650 V 10 A SiC Schottky Diode Schottky 5-Pin ThinPAK 8x8
- RS-stocknr.:
- 244-2890
- Fabrikantnummer:
- IDL10G65C5XUMA2
- Fabrikant:
- Infineon
Subtotaal (1 rol van 3000 eenheden)*
€ 3.858,00
(excl. BTW)
€ 4.668,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 26 januari 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 + | € 1,286 | € 3.858,00 |
*prijsindicatie
- RS-stocknr.:
- 244-2890
- Fabrikantnummer:
- IDL10G65C5XUMA2
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | SiC Schottky Diode | |
| Package Type | ThinPAK 8x8 | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | 5th Generation thinQ!TM | |
| Rectifier Type | Schottky | |
| Pin Count | 5 | |
| Maximum Forward Voltage Vf | 1.7V | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Current Ir | 180μA | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | J-STD20, JESD22 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type SiC Schottky Diode | ||
Package Type ThinPAK 8x8 | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series 5th Generation thinQ!TM | ||
Rectifier Type Schottky | ||
Pin Count 5 | ||
Maximum Forward Voltage Vf 1.7V | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Current Ir 180μA | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals J-STD20, JESD22 | ||
Automotive Standard No | ||
The Infineon IDL10G65C5XUMA2 generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new family of products showing improvedefficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf).
Revolutionary semiconductor material - Silicon Carbide
Benchmark switching behavior
No reverse recovery/ No forward recovery
Temperature independent switching behavior
High surge current capability
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC1) for target applications
Breakdown voltage tested at 22 mA2)
Optimized for high temperature operation
Gerelateerde Links
- Infineon 650 V 10 A SiC Schottky Diode Schottky 5-Pin ThinPAK 8x8 IDL10G65C5XUMA2
- Infineon 650 V 12 A SiC Schottky Diode Schottky 10-Pin HDSOP
- Infineon 650 V 10 A SiC Schottky Diode Schottky 10-Pin HDSOP
- Infineon 650 V 12 A SiC Schottky Diode Schottky 10-Pin HDSOP IDDD12G65C6XTMA1
- Infineon 650 V 10 A SiC Schottky Diode Schottky 10-Pin HDSOP IDDD06G65C6XTMA1
- Infineon 650 V 12 A SiC Schottky Diode Schottky 2-Pin TO-220
- Infineon 650 V 12 A SiC Schottky Diode Schottky 2-Pin TO-220 IDH12G65C5XKSA2
- Infineon 650 V 6 A SiC Silicon Carbide Diode Schottky 2-Pin TO-220