Infineon 650 V 4 A Rectifier & Schottky Diode 5-Pin PG-VSON-4
- RS-stocknr.:
- 258-0965
- Fabrikantnummer:
- IDL04G65C5XUMA2
- Fabrikant:
- Infineon
Subtotaal (1 rol van 3000 eenheden)*
€ 1.815,00
(excl. BTW)
€ 2.196,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 80,00
Tijdelijk niet op voorraad
- Verzending vanaf 01 januari 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 + | € 0,605 | € 1.815,00 |
*prijsindicatie
- RS-stocknr.:
- 258-0965
- Fabrikantnummer:
- IDL04G65C5XUMA2
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Mount Type | Surface | |
| Product Type | Rectifier & Schottky Diode | |
| Package Type | PG-VSON-4 | |
| Maximum Continuous Forward Current If | 4A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Silicon Carbide Schottky Diode | |
| Series | IDL04G65C5 | |
| Pin Count | 5 | |
| Peak Reverse Current Ir | 70μA | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 1.7V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | J-STD20 and JESD22 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Mount Type Surface | ||
Product Type Rectifier & Schottky Diode | ||
Package Type PG-VSON-4 | ||
Maximum Continuous Forward Current If 4A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Silicon Carbide Schottky Diode | ||
Series IDL04G65C5 | ||
Pin Count 5 | ||
Peak Reverse Current Ir 70μA | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 1.7V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals J-STD20 and JESD22 | ||
Automotive Standard No | ||
The Infineon CoolSiC Schottky diodes generation 5 600V, 2 A in a DPAK real2pin package represents our leading edge technology for SiC Schottky barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit.
No reverse recovery charge
Soft switching reverse recovery waveform
Temperature independent switching behaviour
Highly stable switching performance
Reduced cooling requirements
Reduced risks of thermal runaway
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