Infineon 4 V 110 mA Diode 3-Pin SOT-323 BAT1504WH6327XTSA1
- RS-stocknr.:
- 261-3918
- Fabrikantnummer:
- BAT1504WH6327XTSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
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€ 5,88
(excl. BTW)
€ 7,12
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
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- Verzending 2.980 stuk(s) vanaf 01 oktober 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 20 - 180 | € 0,294 | € 5,88 |
| 200 - 480 | € 0,276 | € 5,52 |
| 500 - 980 | € 0,259 | € 5,18 |
| 1000 - 1980 | € 0,241 | € 4,82 |
| 2000 + | € 0,223 | € 4,46 |
*prijsindicatie
- RS-stocknr.:
- 261-3918
- Fabrikantnummer:
- BAT1504WH6327XTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | Diode | |
| Mount Type | Surface | |
| Package Type | SOT-323 | |
| Maximum Continuous Forward Current If | 110mA | |
| Peak Reverse Repetitive Voltage Vrrm | 4V | |
| Series | BAT15-04W | |
| Diode Configuration | Series | |
| Pin Count | 3 | |
| Peak Reverse Current Ir | 5μA | |
| Maximum Forward Voltage Vf | 0.32V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC47/20/22 | |
| Width | 2.1mm | |
| Length | 2mm | |
| Height | 0.9mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type Diode | ||
Mount Type Surface | ||
Package Type SOT-323 | ||
Maximum Continuous Forward Current If 110mA | ||
Peak Reverse Repetitive Voltage Vrrm 4V | ||
Series BAT15-04W | ||
Diode Configuration Series | ||
Pin Count 3 | ||
Peak Reverse Current Ir 5μA | ||
Maximum Forward Voltage Vf 0.32V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC47/20/22 | ||
Width 2.1mm | ||
Length 2mm | ||
Height 0.9mm | ||
Automotive Standard No | ||
The Infineon RF Schottky diodes are silicon low barrier N-type devices with an integrated guard ring on-chip for over-voltage protection. Their low barrier height, low forward voltage and low junction capacitance make a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz.
RoHS compliant and halogen-free
Low capacitance and inductance
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