Infineon 4V 110mA, Dual Schottky Diode, 3-Pin SOT323-3 BAT1504WH6327XTSA1

The Infineon RF Schottky diodes are silicon low barrier N-type devices with an integrated guard ring on-chip for over-voltage protection. Their low barrier height, low forward voltage and low junction capacitance make a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz.

RoHS compliant and halogen-free
Low capacitance and inductance