STMicroelectronics 1200 V 40 A Rectifier & Schottky Diode Rectifier Diode 3-Pin TO-247 STPSC40G12WLY
- RS-stocknr.:
- 275-1370
- Fabrikantnummer:
- STPSC40G12WLY
- Fabrikant:
- STMicroelectronics
Subtotaal (1 eenheid)*
€ 16,57
(excl. BTW)
€ 20,05
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
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Aantal stuks | Per stuk |
|---|---|
| 1 + | € 16,57 |
*prijsindicatie
- RS-stocknr.:
- 275-1370
- Fabrikantnummer:
- STPSC40G12WLY
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | Rectifier & Schottky Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 40A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Diode Configuration | 2x Common Cathode Pair | |
| Series | STPS | |
| Rectifier Type | Rectifier Diode | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -65°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 140A | |
| Maximum Operating Temperature | 175°C | |
| Height | 34.95mm | |
| Standards/Approvals | RoHS | |
| Length | 15.75mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type Rectifier & Schottky Diode | ||
Mount Type Through Hole | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 40A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Diode Configuration 2x Common Cathode Pair | ||
Series STPS | ||
Rectifier Type Rectifier Diode | ||
Pin Count 3 | ||
Minimum Operating Temperature -65°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 140A | ||
Maximum Operating Temperature 175°C | ||
Height 34.95mm | ||
Standards/Approvals RoHS | ||
Length 15.75mm | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
The STMicroelectronics SiC diode is available in TO-247 and is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF schottky diode structure with a 1200 V rating. Due to the schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature.
No or negligible reverse recovery
Switching behaviour independent of temperature
Robust high voltage periphery
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