1Gb LP DDR, 1.8V, x16, 200MHz, VFBGA60

  • RS-stocknr. 171-2244
  • Fabrikantnummer W94AD6KBHX5I/TRAY
  • Fabrikant Winbond
Datasheets
Wetgeving en compliance
Conform
Productomschrijving

This is a 1Gb Low Power DDR SDRAM organized as 16M words x 4 banks x 16bits

Power supply VDD = 1.7V∼1.95V、VDDQ = 1.7V∼1.95V
Data width: x16
Burst Type: Sequential or Interleave、Clock rate : 166MHz, 200MHz
Standard Self Refresh Mode
PASR、ATCSR、Power Down Mode、DPD
Programmable output buffer driver strength
Four internal banks for concurrent operation
CAS Latency: 2 and 3
Burst Length: 2、4 、8 and 16
Operating Temperature Range: Extended (-25°C ∼ 85°C), Industrial (-40°C ∼ 85°C)
Bidirectional, data strobe (DQS) is transmitted or received with data, to be used in capturing data at the receiver

Specificaties
Kenmerk Waarde
Memory Size 1Gbit
Organisation 64 M x 16 bit
SDRAM Class DDR
Data Rate DDR
Data Bus Width 16bit
Address Bus Width 16bit
Number of Bits per Word 64 M
Maximum Random Access Time 6.5ns
Number of Words 64M
Mounting Type Surface Mount
Package Type VFBGA
Pin Count 60
Dimensions 8.1 x 9.1 x 0.65mm
Height 0.65mm
Length 8.1mm
Maximum Operating Temperature +85 °C
Minimum Operating Temperature -40 °C
Minimum Operating Supply Voltage 1.7 V
Width 9.1mm
Maximum Operating Supply Voltage 1.95 V
311 op voorraad - levertijd is 2 werkdag(en).
Prijs Each
5,12
(excl. BTW)
6,20
(incl. BTW)
Aantal stuks
Per stuk
1 - 4
€ 5,12
5 - 9
€ 4,60
10 - 49
€ 4,18
50 - 99
€ 3,84
100 +
€ 3,54
Verpakkingsopties
Related Products
The W9425G6KH is a 256M DDR SDRAM and ...
Description:
The W9425G6KH is a 256M DDR SDRAM and speed involving -4/-5/-5I/-5A. Up to 250 MHz Clock FrequencyDouble Data Rate architecture, two data transfers per clock cycleDifferential clock inputs (CLK and /CLK)DQS is edge-aligned with data for Read, center-aligned with data ...
W9464G6KH is a 64M DDR SDRAM and speed ...
Description:
W9464G6KH is a 64M DDR SDRAM and speed involving -5 and -5I. 2.5V ±0.2V Power Supply for DDR400Up to 200 MHz Clock FrequencyDouble Data Rate architecture, two data transfers per clock cycleDifferential clock inputs (CLK and /CLK)DQS is edge-aligned with ...
This is a 512Mb Low Power DDR SDRAM ...
Description:
This is a 512Mb Low Power DDR SDRAM organized as 4M words x 4 banks x 16bits. Burst Type: Sequential or InterleaveStandard Self Refresh ModePASR, ATCSR, Power Down Mode、DPDProgrammable output buffer driver strengthFour internal banks for concurrent operationBidirectional, data strobe ...