Infineon SRAM Memory Chip, CY7C1049GN-10VXI- 4Mbit

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€ 7,92

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€ 9,58

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  • Verzending vanaf 10 augustus 2026
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2 - 18€ 3,96€ 7,92
20 - 48€ 3,275€ 6,55
50 - 98€ 3,19€ 6,38
100 - 198€ 3,11€ 6,22
200 +€ 3,03€ 6,06

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Verpakkingsopties
RS-stocknr.:
182-3386
Fabrikantnummer:
CY7C1049GN-10VXI
Fabrikant:
Infineon
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Merk

Infineon

Memory Size

4Mbit

Organisation

512k x 8

Number of Words

512k

Number of Bits per Word

8bit

Maximum Random Access Time

10ns

Land van herkomst:
US
CY7C1049GN is a high-performance CMOS fast static RAM device organized as 512K words by 8-bits. Data writes are performed by asserting the Chip Enable (CE) and Write Enable (WE) inputs LOW, while providing the data on I/O0 through I/O7 and address on A0 through A18 pins. Data reads are performed by asserting the Chip Enable (CE) and Output Enable (OE) inputs LOW and providing the required address on the address lines. Read data is accessible on the I/O lines (I/O0 through I/O7). All I/Os (I/O0 through I/O7) are placed in a high-impedance state during the following events: The device is deselected (CE HIGH) The control signal OE is de-asserted.

High speed

tAA = 10 ns

Low Active and standby currents

Active current: ICC = 38 mA typical

Standby current: ISB2 = 6 mA typical

Operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and

4.5 V to 5.5 V

1.0 V data retention

TTL-compatible inputs and outputs

Pb-free 36-pin SOJ and 44-pin TSOP II packages

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