Renesas Electronics SRAM, RMLV0816BGSB-4S2#AA0- 8 MB
- RS-stocknr.:
- 250-0194
- Fabrikantnummer:
- RMLV0816BGSB-4S2#AA0
- Fabrikant:
- Renesas Electronics
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 4,61
(excl. BTW)
€ 5,58
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Laatste voorraad RS
- Laatste 22 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 4,61 |
| 10 - 24 | € 4,28 |
| 25 - 49 | € 4,25 |
| 50 - 74 | € 4,14 |
| 75 + | € 4,06 |
*prijsindicatie
- RS-stocknr.:
- 250-0194
- Fabrikantnummer:
- RMLV0816BGSB-4S2#AA0
- Fabrikant:
- Renesas Electronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Renesas Electronics | |
| Product Type | SRAM | |
| Memory Size | 8MB | |
| Organisation | 512k x 16 | |
| Number of Words | 512K | |
| Number of Bits per Word | 16 | |
| Maximum Random Access Time | 45ns | |
| Minimum Supply Voltage | 2.4V | |
| Maximum Supply Voltage | 3.6V | |
| Mount Type | Surface | |
| Minimum Operating Temperature | -40°C | |
| Package Type | TSOP | |
| Pin Count | 44 | |
| Maximum Operating Temperature | 85°C | |
| Width | 10.16 mm | |
| Height | 1mm | |
| Length | 18.41mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Renesas Electronics | ||
Product Type SRAM | ||
Memory Size 8MB | ||
Organisation 512k x 16 | ||
Number of Words 512K | ||
Number of Bits per Word 16 | ||
Maximum Random Access Time 45ns | ||
Minimum Supply Voltage 2.4V | ||
Maximum Supply Voltage 3.6V | ||
Mount Type Surface | ||
Minimum Operating Temperature -40°C | ||
Package Type TSOP | ||
Pin Count 44 | ||
Maximum Operating Temperature 85°C | ||
Width 10.16 mm | ||
Height 1mm | ||
Length 18.41mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Renesas Electronics 8-Mbit static RAM fabricated by high-performance advanced LPSRAM technologies. It has realized higher density, higher performance and low power consumption. It offers low power standby power dissipation.
Equal access and cycle times
Common data input and output
Directly TTL compatible
Battery backup operation
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