Renesas Electronics SRAM, RMLV0816BGSB-4S2#AA0- 8Mbit
- RS-stocknr.:
- 250-0194P
- Fabrikantnummer:
- RMLV0816BGSB-4S2#AA0
- Fabrikant:
- Renesas Electronics
Bulkkorting beschikbaar
Subtotaal 10 eenheden (geleverd op een tray)*
€ 42,80
(excl. BTW)
€ 51,80
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Laatste voorraad RS
- Laatste 22 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk |
|---|---|
| 10 - 24 | € 4,28 |
| 25 - 49 | € 4,25 |
| 50 - 74 | € 4,14 |
| 75 + | € 4,06 |
*prijsindicatie
- RS-stocknr.:
- 250-0194P
- Fabrikantnummer:
- RMLV0816BGSB-4S2#AA0
- Fabrikant:
- Renesas Electronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Renesas Electronics | |
| Memory Size | 8Mbit | |
| Organisation | 512k x 16 | |
| Number of Words | 512k | |
| Number of Bits per Word | 16bit | |
| Maximum Random Access Time | 45ns | |
| Low Power | Yes | |
| Mounting Type | Surface Mount | |
| Package Type | TSOP | |
| Pin Count | 44 | |
| Dimensions | 18.41 x 10.16 x 1mm | |
| Height | 1mm | |
| Maximum Operating Supply Voltage | 3.6 V | |
| Maximum Operating Temperature | +85 °C | |
| Length | 18.41mm | |
| Width | 10.16mm | |
| Minimum Operating Temperature | -40 °C | |
| Minimum Operating Supply Voltage | 2.4 V | |
| Alles selecteren | ||
|---|---|---|
Merk Renesas Electronics | ||
Memory Size 8Mbit | ||
Organisation 512k x 16 | ||
Number of Words 512k | ||
Number of Bits per Word 16bit | ||
Maximum Random Access Time 45ns | ||
Low Power Yes | ||
Mounting Type Surface Mount | ||
Package Type TSOP | ||
Pin Count 44 | ||
Dimensions 18.41 x 10.16 x 1mm | ||
Height 1mm | ||
Maximum Operating Supply Voltage 3.6 V | ||
Maximum Operating Temperature +85 °C | ||
Length 18.41mm | ||
Width 10.16mm | ||
Minimum Operating Temperature -40 °C | ||
Minimum Operating Supply Voltage 2.4 V | ||
The Renesas Electronics 8-Mbit static RAM fabricated by high-performance advanced LPSRAM technologies. It has realized higher density, higher performance and low power consumption. It offers low power standby power dissipation.
Equal access and cycle times
Common data input and output
Directly TTL compatible
Battery backup operation
Common data input and output
Directly TTL compatible
Battery backup operation