Renesas Electronics SRAM, 6116LA25SOGI- 16kB
- RS-stocknr.:
- 262-8970
- Fabrikantnummer:
- 6116LA25SOGI
- Fabrikant:
- Renesas Electronics
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 6,34
(excl. BTW)
€ 7,67
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 208 stuk(s) vanaf 26 januari 2026
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 6,34 |
| 10 - 24 | € 5,78 |
| 25 - 49 | € 5,69 |
| 50 - 99 | € 5,62 |
| 100 + | € 5,06 |
*prijsindicatie
- RS-stocknr.:
- 262-8970
- Fabrikantnummer:
- 6116LA25SOGI
- Fabrikant:
- Renesas Electronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Renesas Electronics | |
| Memory Size | 16kB | |
| Organisation | 2K x 8 | |
| Maximum Random Access Time | 25ns | |
| Alles selecteren | ||
|---|---|---|
Merk Renesas Electronics | ||
Memory Size 16kB | ||
Organisation 2K x 8 | ||
Maximum Random Access Time 25ns | ||
- Land van herkomst:
- TW
The Renesas Electronics CMOS SRAM is organized as 2K x 8. The SRAM offers a reduced power standby mode. The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.
Low-power consumption
Battery backup operation 2V data retention voltage
Produced with advanced CMOS high-performance technology
CMOS process virtually eliminates alpha particle soft-error rates
Input and output directly TTL-compatible
No clocks or refresh required
Battery backup operation 2V data retention voltage
Produced with advanced CMOS high-performance technology
CMOS process virtually eliminates alpha particle soft-error rates
Input and output directly TTL-compatible
No clocks or refresh required
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