Infineon SRAM, CY14B108N-ZSP45XI- 8 MB
- RS-stocknr.:
- 273-5253
- Fabrikantnummer:
- CY14B108N-ZSP45XI
- Fabrikant:
- Infineon
Subtotaal (1 tray van 108 eenheden)*
€ 5.243,616
(excl. BTW)
€ 6.344,784
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 25 september 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tray* |
|---|---|---|
| 108 + | € 48,552 | € 5.243,62 |
*prijsindicatie
- RS-stocknr.:
- 273-5253
- Fabrikantnummer:
- CY14B108N-ZSP45XI
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Memory Size | 8MB | |
| Product Type | SRAM | |
| Number of Words | 512K | |
| Number of Bits per Word | 16 | |
| Maximum Random Access Time | 45ns | |
| Minimum Supply Voltage | 0.5V | |
| Maximum Supply Voltage | 4.1V | |
| Mount Type | Surface | |
| Package Type | TSOP | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 85°C | |
| Pin Count | 54 | |
| Height | 10.26mm | |
| Length | 22.52mm | |
| Series | CY14B108N | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Memory Size 8MB | ||
Product Type SRAM | ||
Number of Words 512K | ||
Number of Bits per Word 16 | ||
Maximum Random Access Time 45ns | ||
Minimum Supply Voltage 0.5V | ||
Maximum Supply Voltage 4.1V | ||
Mount Type Surface | ||
Package Type TSOP | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 85°C | ||
Pin Count 54 | ||
Height 10.26mm | ||
Length 22.52mm | ||
Series CY14B108N | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon SRAM is a fast static RAM with a non volatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512 K words of 16 bits each. The embedded non volatile elements incorporate Quantum Trap technology, producing the worlds most reliable non volatile memory. The SRAM provides infinite read and write cycles, while independent non volatile data resides in the highly reliable Quantum Trap cell. Data transfers from the SRAM to the non volatile elements takes place automatically at power down. On power up, data is restored to the SRAM from the non volatile memory. Both the STORE and RECALL operations are also available under software control.
Pb free
RoHS compliant
20 year data retention
Infinite read write and recall cycles
1 million STORE cycles to QuantumTrap
RECALL to SRAM initiated by software or power up