Infineon Silicon Junction, Single, 30 A, 2-Pin 1200 V TO-220 IDP30E120XKSA1
- RS-stocknr.:
- 110-7168
- Fabrikantnummer:
- IDP30E120XKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 10 eenheden)*
€ 16,68
(excl. BTW)
€ 20,18
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 03 november 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 10 | € 1,668 | € 16,68 |
| 20 - 90 | € 1,031 | € 10,31 |
| 100 - 190 | € 1,004 | € 10,04 |
| 200 - 490 | € 0,979 | € 9,79 |
| 500 + | € 0,954 | € 9,54 |
*prijsindicatie
- RS-stocknr.:
- 110-7168
- Fabrikantnummer:
- IDP30E120XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | Silicon Junction | |
| Diode Configuration | Single | |
| Maximum Forward Current If | 30A | |
| Mount Type | Through Hole | |
| Sub Type | Silicon Junction | |
| Package Type | TO-220 | |
| Pin Count | 2 | |
| Maximum Forward Voltage Vf | 2.15V | |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 102A | |
| Peak Reverse Recovery Time trr | 380ns | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 138W | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.2mm | |
| Height | 15.95mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type Silicon Junction | ||
Diode Configuration Single | ||
Maximum Forward Current If 30A | ||
Mount Type Through Hole | ||
Sub Type Silicon Junction | ||
Package Type TO-220 | ||
Pin Count 2 | ||
Maximum Forward Voltage Vf 2.15V | ||
Maximum Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 102A | ||
Peak Reverse Recovery Time trr 380ns | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 138W | ||
Maximum Operating Temperature 150°C | ||
Length 10.2mm | ||
Height 15.95mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Fast Switching Emitter Controlled Diodes, Infineon
The Infineon switching emitter controlled diodes are the Rapid 1 and the Rapid 2 families also the 600 V/1200 V Ultra-soft diodes. The diodes work in various applications from Telecom, UPS, welding, AC-DC and the Ultra-soft version works on motor drive applications up to 30 kHz.
Rapid 1 diode switches between 18kHz and 40kHz
1.35V temperature-stable forward voltage
Ideal for Power Factor Correction (PFC) topologies
The Rapid 2 diode switches between 40 kHz and 100 kHz
Low reverse recovery charge: forward voltage ratio for BiC performance
Low reverse recovery time
Low turn-on losses on the boost switch
Ultra-fast Diode 600 V/1200 V Emitter Controlled technology
Qualified according to JEDEC Standard
Good EMI behaviour
Low conduction losses
Easy paralleling
Diodes and Rectifiers, Infineon
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- IXYS Silicon Junction 12 A, 2-Pin 1200 V TO-220 DSEP12-12A
- IXYS Silicon Junction 12 A, 2-Pin 1200 V TO-220 DSEP12-12B