Infineon Silicon Junction, Single, 75 A, 3-Pin 650 V TO-247
- RS-stocknr.:
- 218-4378
- Fabrikantnummer:
- IDW75D65D1XKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 tube van 30 eenheden)*
€ 56,16
(excl. BTW)
€ 67,95
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- Plus verzending 180 stuk(s) vanaf 25 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 30 - 30 | € 1,872 | € 56,16 |
| 60 - 120 | € 1,778 | € 53,34 |
| 150 - 270 | € 1,704 | € 51,12 |
| 300 - 570 | € 1,629 | € 48,87 |
| 600 + | € 1,516 | € 45,48 |
*prijsindicatie
- RS-stocknr.:
- 218-4378
- Fabrikantnummer:
- IDW75D65D1XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Diode Configuration | Single | |
| Product Type | Silicon Junction | |
| Maximum Forward Current If | 75A | |
| Mount Type | Through Hole | |
| Sub Type | Silicon Junction | |
| Package Type | TO-247 | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Forward Voltage Vf | 1.35V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 580A | |
| Peak Reverse Recovery Time trr | 108ns | |
| Maximum Power Dissipation Pd | 326W | |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Maximum Operating Temperature | 175°C | |
| Height | 41.42mm | |
| Standards/Approvals | RoHS | |
| Length | 16.13mm | |
| Series | D75ED1 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Diode Configuration Single | ||
Product Type Silicon Junction | ||
Maximum Forward Current If 75A | ||
Mount Type Through Hole | ||
Sub Type Silicon Junction | ||
Package Type TO-247 | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Forward Voltage Vf 1.35V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 580A | ||
Peak Reverse Recovery Time trr 108ns | ||
Maximum Power Dissipation Pd 326W | ||
Maximum Peak Reverse Repetitive Voltage Vrrm 650V | ||
Maximum Operating Temperature 175°C | ||
Height 41.42mm | ||
Standards/Approvals RoHS | ||
Length 16.13mm | ||
Series D75ED1 | ||
Automotive Standard No | ||
The Infineon Rapid 1 series switching emitter controller power silicon diode in dual anode configuration and in a TO-247 package, allowing design optimization for more compact dimensions, easier assembly and consequently lower costs. It is used in various applications like in telecom, UPS, welding, adapter, home appliance and air condition. It has forward current of 150 A.
1.35 V temperature-stable forward voltage
Highest softness-factor for ultimate softness and low EMI filtering
Low reverse recovery charge
Low reverse recovery current
For applications switching between 18 kHz and 40 kHz
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