Infineon Silicon Junction, Single, 30 A, 3-Pin 650 V TO-247
- RS-stocknr.:
- 218-4371
- Fabrikantnummer:
- IDW30C65D1XKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 tube van 30 eenheden)*
€ 50,40
(excl. BTW)
€ 60,90
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- Plus verzending 30 stuk(s) vanaf 27 juli 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 30 - 30 | € 1,68 | € 50,40 |
| 60 - 120 | € 1,596 | € 47,88 |
| 150 - 270 | € 1,529 | € 45,87 |
| 300 - 570 | € 1,462 | € 43,86 |
| 600 + | € 1,361 | € 40,83 |
*prijsindicatie
- RS-stocknr.:
- 218-4371
- Fabrikantnummer:
- IDW30C65D1XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Diode Configuration | Single | |
| Product Type | Silicon Junction | |
| Maximum Forward Current If | 30A | |
| Sub Type | Silicon Junction | |
| Mount Type | Through Hole | |
| Package Type | TO-247 | |
| Pin Count | 3 | |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Peak Reverse Recovery Time trr | 71ns | |
| Maximum Power Dissipation Pd | 92W | |
| Minimum Operating Temperature | -40°C | |
| Maximum Forward Voltage Vf | 1.35V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 120A | |
| Maximum Operating Temperature | 175°C | |
| Height | 41.42mm | |
| Standards/Approvals | RoHS, JEDEC | |
| Series | Rapid1 | |
| Length | 16.13mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Diode Configuration Single | ||
Product Type Silicon Junction | ||
Maximum Forward Current If 30A | ||
Sub Type Silicon Junction | ||
Mount Type Through Hole | ||
Package Type TO-247 | ||
Pin Count 3 | ||
Maximum Peak Reverse Repetitive Voltage Vrrm 650V | ||
Peak Reverse Recovery Time trr 71ns | ||
Maximum Power Dissipation Pd 92W | ||
Minimum Operating Temperature -40°C | ||
Maximum Forward Voltage Vf 1.35V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 120A | ||
Maximum Operating Temperature 175°C | ||
Height 41.42mm | ||
Standards/Approvals RoHS, JEDEC | ||
Series Rapid1 | ||
Length 16.13mm | ||
Automotive Standard No | ||
The Infineon Rapid 1 series switching emitter controller power silicon diode in common cathode configuration and in a TO-247 package, allowing design optimization for more compact dimensions, easier assembly and consequently lower costs. It is used in various applications like in telecom, UPS, welding, adapter, home appliance and air condition. It has forward current of 30 A.
1.35 V temperature-stable forward voltage
Highest softness-factor for ultimate softness and low EMI filtering
Low reverse recovery charge
Low reverse recovery current
For applications switching between 18 kHz and 40 kHz
Gerelateerde Links
- Infineon Silicon Junction 30 A, 3-Pin 650 V TO-247 IDW30C65D1XKSA1
- Infineon Silicon Junction 60 A, 3-Pin 650 V TO-247
- Infineon Silicon Junction 80 A, 3-Pin 650 V TO-247
- Infineon Silicon Junction 15 A, 3-Pin 650 V TO-247
- Infineon Silicon Junction 40 A, 3-Pin 650 V TO-247
- Infineon Silicon Junction 75 A, 3-Pin 650 V TO-247
- Infineon Silicon Junction 15 A, 3-Pin 650 V TO-247 IDW15E65D2FKSA1
- Infineon Silicon Junction 80 A, 3-Pin 650 V TO-247 IDW80C65D2XKSA1