Power Integrations SiC Schottky, Single, 12 A, 2-Pin 600 V TO-220
- RS-stocknr.:
- 231-8074P
- Fabrikantnummer:
- QH12TZ600Q
- Fabrikant:
- Power Integrations
Momenteel niet beschikbaar
We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 231-8074P
- Fabrikantnummer:
- QH12TZ600Q
- Fabrikant:
- Power Integrations
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Power Integrations | |
| Product Type | SiC Schottky | |
| Diode Configuration | Single | |
| Maximum Forward Current If | 12A | |
| Mount Type | Through Hole | |
| Sub Type | SiC Schottky | |
| Package Type | TO-220 | |
| Pin Count | 2 | |
| Peak Reverse Recovery Time trr | 20.5ns | |
| Maximum Forward Voltage Vf | 3.1V | |
| Maximum Power Dissipation Pd | 61mW | |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 600V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 100A | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10.67mm | |
| Height | 30.73mm | |
| Width | 4.7mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Power Integrations | ||
Product Type SiC Schottky | ||
Diode Configuration Single | ||
Maximum Forward Current If 12A | ||
Mount Type Through Hole | ||
Sub Type SiC Schottky | ||
Package Type TO-220 | ||
Pin Count 2 | ||
Peak Reverse Recovery Time trr 20.5ns | ||
Maximum Forward Voltage Vf 3.1V | ||
Maximum Power Dissipation Pd 61mW | ||
Maximum Peak Reverse Repetitive Voltage Vrrm 600V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 100A | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10.67mm | ||
Height 30.73mm | ||
Width 4.7mm | ||
Automotive Standard No | ||
The Power Integrations Qspeed H-Series SiC Replacement Diode has the lowest QRR of any 600 V silicon diode. Its recovery characteristics increase efficiency, reduces EMI and eliminates snubbers. It replaces SiC diodes for similar efficiency performance in high switching frequency applications.
Features and Benefits
Low QRR, low IRRM, low tRR
High dIF/dt capable (1000 A / μs)
Soft recovery
AEC-Q101 qualified
Fab, assembly and test certified to IATF 16949
Eliminates need for snubber circuits
Reduces EMI filter component size & count
Enables extremely fast switching
Applications
Power Factor Correction boost diode in on-board charger
Output rectifier of on-board charger