STMicroelectronics SGT240R70ITK Power Transistor, 700 V N-Channel 10 A Surface Mount TO-252 (D-PAK-3), 3-Pin
- RS-stocknr.:
- 898-598
- Fabrikantnummer:
- SGT240R70ITK
- Fabrikant:
- STMicroelectronics
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Aantal stuks | Per stuk | Bespaar |
|---|---|---|
| 1 - 9 | € 2,45 | - |
| 10 - 99 | € 1,21 | € 12,40 |
| 100 - 499 | € 1,09 | € 136,00 |
| 500 - 999 | € 0,88 | € 785,00 |
| 1000 + | € 0,83 | € 1.620,00 |
*prijsindicatie
- RS-stocknr.:
- 898-598
- Fabrikantnummer:
- SGT240R70ITK
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
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Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | Power Transistor | |
| Package Type | TO-252 (D-PAK-3) | |
| Maximum Collector Emitter Voltage Vceo | 700V | |
| Mount Type | Surface Mount | |
| Transistor Configuration | N-Channel | |
| Maximum Emitter Base Voltage VEBO | 7V | |
| Maximum Power Dissipation Pd | 77W | |
| Maximum Continuous Collector Current Ic | 10A | |
| Transistor Polarity | N-Channel | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Length | 6.22mm | |
| Height | 10.5mm | |
| Standards/Approvals | ECOPACK2 | |
| Width | 2.38mm | |
| Series | SGT240R70ITK | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type Power Transistor | ||
Package Type TO-252 (D-PAK-3) | ||
Maximum Collector Emitter Voltage Vceo 700V | ||
Mount Type Surface Mount | ||
Transistor Configuration N-Channel | ||
Maximum Emitter Base Voltage VEBO 7V | ||
Maximum Power Dissipation Pd 77W | ||
Maximum Continuous Collector Current Ic 10A | ||
Transistor Polarity N-Channel | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Length 6.22mm | ||
Height 10.5mm | ||
Standards/Approvals ECOPACK2 | ||
Width 2.38mm | ||
Series SGT240R70ITK | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The STMicroelectronics PowerGaN transistor device provides extremely low conduction losses, high current capability and ultrafast switching operation to enable high power density and unbeatable efficiency performances.
Enhancement mode normally off transistor
High power management capability
Zero reverse recovery charge
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